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DMG6968UDM
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low Gate Charge
Low R DS(ON) :
? 24m Ω @V GS = 4.5V
? 28m Ω @V GS = 2.5V
? 34m Ω @V GS = 1.8V
Low Input/Output Leakage
ESD Protected up to 2kV HBM
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
S 1
SOT-26
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Case: SOT-26
Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.0008 grams (approximate)
D
D
G 1
D 1 / D 2
S 2
D 1 / D 2
G 2
G1
S1
G2
S2
ESD PROTECTED TO 2kV
TOP VIEW
TOP VIEW
Pin Configuration
N-Channel
N-Channel
Equivalent Circuit
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 12
Unit
V
V
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
T A = 25°C
T A = 70°C
I D
I DM
6.5
5.2
30
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤ 10s
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
0.85
147
-55 to +150
Unit
W
° C /W
° C
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤ 10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG6968UDM
Document number: DS31758 Rev. 4 - 2
1 of 6
www.diodes.com
July 2009
? Diodes Incorporated
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